Datasheet > CEP1012L_07

CEP1012L_07

更新时间： 2024-09-12 04:11:59

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	376K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP1012L_07 数据手册

CEP1012L/CEB1012L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

120V, 10A, R_DS(ON)= 120mΩ @V_GS= 5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

120

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

100

P_D

0.8

W/ C

Operating and Store Temperature Range

TJ,Tstg

-65 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

1.25

62.5

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 2. 2007.Jan

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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