Datasheet > CEP10N4

CEP10N4

更新时间： 2024-01-31 20:50:53

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	87K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEP10N4 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEP10N4 数据手册

CEP10N4/CEB10N4

CEI10N4/CEF10N4

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

450V

R_DS(ON)

0.7Ω

I_D

@V_GS

10V

CEP10N4

CEB10N4

CEI10N4

CEF10N4

10A

10A ^e

0.7Ω

10V

0.7Ω

10V

0.7Ω

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

CEB SERIES

TO-263(DD-PAK)

CEI SERIES

TO-262(I2-PAK)

CEP SERIES

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263/262 TO-220F

450

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±30

10 ^e

40 ^e

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

Single Pulsed Avalanche Energy ^d

Single Pulsed Avalanche Current ^d

Operating and Store Temperature Range

125

1.0

450

W/ C

P_D

0.36

450

E_AS

I_AS

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.0

2.8

RθJA

62.5

2002.September

http://www.cetsemi.com

4 - 50

12 3 4

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