Datasheet > CEP1175

CEP1175

更新时间： 2024-01-20 23:44:00

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	393K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEP1175 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CEP1175 数据手册

CEP1175/CEB1175

CEF1175

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

650V

R_DS(ON)

1Ω

I_D

@V_GS

10V

CEP1175

CEB1175

CEF1175

10A

10A ^e

1Ω

10V

1Ω

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

I_D

650

Gate-Source Voltage

±30

10 ^e

40 ^e

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

167

1.33

P_D

0.4

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

0.75

62.5

2.5

RθJA

Rev 1. 2006.Oct

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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