Datasheet > CEP10N6_10

CEP10N6_10

更新时间： 2022-05-13 15:54:35

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	403K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP10N6_10 数据手册

CEP10N6/CEB10N6

CEF10N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

600V

R_DS(ON)

0.75Ω

I_D

@V_GS

10V

CEP10N6

CEB10N6

CEF10N6

10A

10A ^d

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

CEP SERIES

TO-263(DD-PAK)

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

600

Gate-Source Voltage

±30

Drain Current-Continuous @ T_C= 25 C

@ T_C= 100 C

Drain Current-Pulsed ^a

10^d

6^d

40 ^d

I_D

I_DM

166

1.3

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.4

W/ C

Single Pulsed Avalanche Energy ^h

E_AS

I_AS

187.5

Single Pulsed Avalanche Current ^h

Operating and Store Temperature Range

T_J,T_stg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

0.75

62.5

2.5

RθJA

Rev 2. 2011.Feb

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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