Datasheet > CEP10N6_10

CEP10N6_10

更新时间： 2022-05-13 15:54:35

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	403K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP10N6_10 数据手册

CEP10N6/CEB10N6

CEF10N6

V_GS=10,9,8,7,6,5V

25 C

_GS=4V

T_J=125C

1.5

-55 C

6.0

3.0

4.5

7.5

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2400

2000

1600

1200

800

400

I_D=8.5A

V_GS=10V

iss

oss

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-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10¹

10⁰

10^-1

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25

25 50 75 100 125 150

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1 234

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