Datasheet > CEP09N7A

CEP09N7A

更新时间： 2024-09-12 04:11:59

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	233K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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技术参数
数据手册

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CEP09N7A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CEP09N7A 数据手册

CEP09N7A/CEB09N7A

CEF09N7A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

700V

R_DS(ON)

1.2Ω

I_D

@V_GS

10V

CEP09N7A

CEB09N7A

CEF09N7A

8A ^e

1.2Ω

10V

1.2Ω

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

I_D

700

Gate-Source Voltage

±30

8 ^e

30 ^e

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

167

1.33

P_D

0.4

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

0.75

62.5

2.5

RθJA

Rev 1. 2006.Oct

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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