Datasheet > CDBV6-54T_12

CDBV6-54T_12

更新时间： 2024-09-16 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
2页	72K
描述
SMD Schottky Barrier Diode Arrays

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中文翻译

获取价格

数据手册

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CDBV6-54T_12 数据手册

SMD Schottky Barrier Diode Arrays

CDBV6-54T/AD/CD/SD/BR-G

Forward Current: 0.2A

Reverse Voltage: 30V

RoHS Device

Features

SOT-363

-Low forward voltage drop.

-Fast switching.

0.087(2.20)

0.071(1.80)

-Ultra-small surface mount package.

-PN junction guard ring for transient and ESD

0.053(1.35)

0.045(1.15)

protection.

-Available in lead Free version.

0.006(0.15)

0.003(0.08)

Mechanical data

0.056(1.40)

0.047(1.20)

0.044(1.10)

-Case: SOT-363, Molded Plastic

0.035(0.90)

0.096(2.45)

0.085(2.15)

-Case material: UL 94V-0 flammability retardant

classification.

-Terminals: Solderable per MIL-STD-202, Method

0.004(0.10)max

208

0.014(0.35)

0.006(0.15)

0.010(0.25)min

-Marking: Orientation: See diagrams below

-Weight: 0.006 grams (approx.)

-Marking: See diagrams below

Dimensions in inches and (millimeters)

CDBV6-54AD-G*

Marking: KL6

CDBV6-54CD-G*

Marking: KL7

CDBV6-54SD-G*

Marking: KL8

CDBV6-54BR-G

Marking: KLB

CDBV6-54T-G

Marking: KLA

*Symmetrical configuration, no orientation indicator.

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Limits

Unit

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

VR^RW^RMM

Forward continuous current (Note 1)

200

300

Repetitive peak forward current (Note 1)

FRM

Forward surge current (Note 1)

Power dissipation (Note 1)

@t<1.0s

FSM

600

200

^OC/W

^OC

Thermal resistance, junction to ambient air (Note 1)

Operation and storage temperature range

θJA

625

, TSTG

-65 ~ +125

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Reverse breakdown voltage (Note 2)

=100μA

V(BR)R

=0.1mA

240

320

I^F=1mA

Forward voltage

I^F=10mA

400

I^F=30mA

500

I^F

=100mA

1000

μA

Reverse leakage current (Note 2)

Total capacitance

=25V

=1.0V, f=1.0MHz

=10mA to I =1.0mA, R

Reverse recovery time

IF=I

=100Ω

trr

Notes:

1. Device mounted on FR-4 PCB, 1×0.85×0.062 inch.

2. Short duration test pulse used to minimize self-heating effect.

REV:A

Page 1

QW-BA015

中文翻译

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