CDBW0530

更新时间： 2024-09-15 22:29:23

品牌	Logo	应用领域
上华 - COMCHIP		整流二极管
页数	文件大小	规格书
2页	62K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

技术参数
数据手册

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CDBW0530 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Is Samacsys：	N
Base Number Matches：	1

CDBW0530 数据手册

SSMMDD SScchhoottttkky Barrier Diodes

CCOOMMCCHHIIPP

www.comchip.com.tw

CDBW0520 - CDBW0540

Voltage: 20- 40 Volts

Current: 0.5 Amp

Feature

SOD-123

Low turn-on voltage

.154 (3.90)

.141 (3.60)

Fast switching

.110 (2.80)

.098 (2.50)

PN junction guard ring for transient and

ESD protection

Mechanical data

Case: SOD-123, molded plastic

Terminals: solderable per MIL-STD-750,

method 2026

Polarity: Indicated by cathode band

.005 (.12) MAX.

.016 (.40)Min.

Mounting position: Any

Dimensions in inches and (millimeters)

Weight:0.008 grams

Maximum Ratings and Electrical Characterics

Parameter

Symbol

CDBW0520

CDBW0530

CDBW0540

Unit

Max.RepetitivePeak Reverse Voltage

Max. DC BlockingVoltage

Max. RMS Voltage

VRRM

VDC

VRMS

Peak Surge ForwardCurrent

8.3ms single halfsine-wave

Sine-wave superimposed on

Rate load (JEDEC )

IFSM

5.5

Max. AverageForward Current

I o

0.5

Max. Forward Currentat 0.1 A

0.5 A

V F

0.3

0.375

0.430

0.385

0.51

Max. Reverse Current

I R

0.075 @ VR=10V

0.02 @ VR=15V

0.01@ VR=20V

0.25 @ VR=20V

0.13 @ VR=30V

0.02 @ VR=40V

Max. Thermal Resistance

206

150

C/W

Operating junction temperature

T j

-55 to +125

Storage temperature

TSTG

-55 to +125

Note 1: Thermalresistance from junctionto ambient andjunction to tolead P.C.B. Mounted on0.2 x 0.2copper pad areas

Page 1

MDS0208001B

中文翻译

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