Datasheet > CDBV6-70TW-G

CDBV6-70TW-G

更新时间： 2024-09-16 12:36:03

品牌	Logo	应用领域
上华 - COMCHIP		小信号肖特基二极管
页数	文件大小	规格书
4页	137K
描述
Small Signal Schottky Diodes

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中文翻译

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技术参数
数据手册

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CDBV6-70TW-G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.56	最大正向电压 (VF)：	0.41 V
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大功率耗散：	0.2 W	最大重复峰值反向电压：	70 V
最大反向电流：	0.1 µA	最大反向恢复时间：	0.005 µs
反向测试电压：	50 V	子类别：	Other Diodes
表面贴装：	YES	Base Number Matches：	1

CDBV6-70TW-G 数据手册

Small Signal Schottky Diodes

CDBV6-70BRW/DWS/DWC/DWA/TW-G

Forward Current: 70mA

Reverse Voltage: 70V

RoHS Device

Features

SOT-363

-Low forward voltage drop.

-Fast switching.

0.087(2.20)

0.079(2.00)

-small surface mount package.

-PN junction guard ring for transient and ESD

protection.

0.053(1.35)

0.045(1.15)

-Available in lead Free version.

0.006(0.15)

0.003(0.08)

0.056(1.40)

0.047(1.20)

0.039(1.00)

0.035(0.90)

Mechanical data

0.096(2.45)

0.085(2.15)

-Case: SOT-363, Molded Plastic

-Case material: UL 94V-0 flammability retardant

classification.

0.018(0.46)

0.010(0.26)

0.004(0.10)max

0.014(0.35)

0.006(0.15)

-Terminals: Solderable per MIL-STD-202,

Method 208

Dimensions in inches and (millimeters)

-Marking: Orientation: See diagrams below

-Weight: 0.006 grams (approx.)

CDBV6-70BRW-G

Marking: K75

CDBV6-70DWS-G

Marking: K74

CDBV6-70DWC-G

Marking: K71

CDBV6-70DWA-G

Marking: K76

CDBV6-70TW-G

Marking: K73

Maximum Rating (at TA=25 °C unless otherwise noted)

Symbol

Parameter

Limits

Unit

Repetitive peak reverse voltage

Peak working reverse voltage

DC blocking voltage

VR^RW^RMM

RMS reverse voltage

VR(RMS)

°C/W

°C

Forward continuous current

Non-repetitive peak forward surge current @ t≤1s

Power dissipation

IFSM

100

200

Thermal resistance form junction to ambient

θJA

500

Junction temperature

Storage temperature

125

TSTG

-55 ~ +150

°C

Electrical Characteristics (at TA=25 C unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Conditions

Min

Reverse voltage

=10μA

=50V

V(BR)

μA

Reverse current

Forward voltage

0.1

0.41

=1mA

=15mA

Total capacitance

=0V, f=1MHz

tot

Reverse recovery time

IF=I =10mA to I

=1mA, Irr=0.1*IR, R =100Ω

trr

REV:A

Page 1

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