是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.11 |
配置: | BRIDGE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | BRIDGE RECTIFIER DIODE | 最大正向电压 (VF): | 1.1 V |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值正向电流: | 50 A |
元件数量: | 4 | 相数: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 最大输出电流: | 1 A |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1000 V |
最大反向电流: | 0.00001 µA | 子类别: | Bridge Rectifier Diodes |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CBR1-D100STR13PBFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1A, 1000V V(RRM), | |
CBR1F-010 | CENTRAL |
获取价格 |
SILICON BRIDDGE RECTIFIERS CONTROLLED AVALANCHE | |
CBR1F-020 | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, CASE A | |
CBR1F-020LEADFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 200V V(RRM), Silicon, CASE A | |
CBR1F-040 | CENTRAL |
获取价格 |
SILICON BRIDDGE RECTIFIERS CONTROLLED AVALANCHE | |
CBR1F-040LEADFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 400V V(RRM), Silicon, CASE A | |
CBR1F-060 | CENTRAL |
获取价格 |
SILICON BRIDDGE RECTIFIERS CONTROLLED AVALANCHE | |
CBR1F-080 | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon, CASE A | |
CBR1F-080LEADFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 800V V(RRM), Silicon, CASE A | |
CBR1F-100 | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1.5A, 1000V V(RRM), Silicon, CASE A |