是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PBCY-W4 |
Reach Compliance Code: | compliant | HTS代码: | 8541.10.00.80 |
风险等级: | 5.32 | 配置: | BRIDGE, 4 ELEMENTS |
二极管元件材料: | SILICON | 二极管类型: | BRIDGE RECTIFIER DIODE |
JESD-30 代码: | O-PBCY-W4 | JESD-609代码: | e3 |
最大非重复峰值正向电流: | 50 A | 元件数量: | 4 |
相数: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
最大输出电流: | 1.5 A | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1000 V | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 10 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CBR1F-D010 | CENTRAL |
获取价格 |
1 AMP DUAL IN lINE FAST RECOVERY SILICON BRICGE RECTIFIER DIP CASE | |
CBR1F-D010-D100 | CENTRAL |
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1 AMP DUAL IN lINE FAST RECOVERY SILICON BRICGE RECTIFIER DIP CASE | |
CBR1F-D020 | CENTRAL |
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1 AMP DUAL IN lINE FAST RECOVERY SILICON BRICGE RECTIFIER DIP CASE | |
CBR1F-D020LEADFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC, DIP-4 | |
CBR1F-D020S | CENTRAL |
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1.0 AMP DUAL IN LINE FAST RECOVERY SILICON BRIDGE RECTIFIER | |
CBR1F-D020S_10 | CENTRAL |
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SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER | |
CBR1F-D020SBKLEADFREE | CENTRAL |
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Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, | |
CBR1F-D020SBKPBFREE | CENTRAL |
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Bridge Rectifier Diode, 1A, 200V V(RRM), | |
CBR1F-D020STR13 | CENTRAL |
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1 AMP DUAL IN lINE FAST RECOVERY SILICON BRICGE RECTIFIER DIP CASE | |
CBR1F-D020STR13PBFREE | CENTRAL |
获取价格 |
Bridge Rectifier Diode, 1A, 200V V(RRM), |