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CBR1F-D040SLEADFREE PDF预览

CBR1F-D040SLEADFREE

更新时间: 2024-12-01 13:06:43
品牌 Logo 应用领域
CENTRAL 快速恢复二极管
页数 文件大小 规格书
2页 110K
描述
Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 400V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4

CBR1F-D040SLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
Base Number Matches:1

CBR1F-D040SLEADFREE 数据手册

 浏览型号CBR1F-D040SLEADFREE的Datasheet PDF文件第2页 
TM  
Central  
CBR1F-D020S SERIES  
Semiconductor Corp.  
1.0 AMP DUAL IN LINE  
FAST RECOVERY  
SILICON BRIDGE RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBR1F-D020S  
Series types are fast recovery, full wave bridge rectifiers  
mounted in a durable epoxy surface mount molded  
case, utilizing glass passivated chips. To order devices  
on tape and reel (1,000/13” reel) add TR13 suffix.  
MARKING CODE: FULL PART NUMBER  
SMDIP CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise specified)  
A
CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-  
SYMBOL D020S  
D040S  
D060S  
D080S  
D100S  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
RRM  
200  
200  
140  
400  
400  
280  
600  
600  
800  
800  
560  
1000  
1000  
700  
V
V
V
R
RMS Reverse Voltage  
V
R(RMS)  
420  
1.0  
V
A
Average Forward Current (T =40°C)  
A
I
O
Peak Forward Surge Current  
I
50  
A
FSM  
I t  
²
²
Rating for Fusing (t<8.35ms)  
3.74  
A s  
Operating and Storage  
Junction Temperature  
T ,T  
J stg  
-65 to +150  
°C  
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
µA  
mA  
V
I
V =Rated V  
5.0  
0.5  
R
R
R
RRM  
RRM  
I
V =Rated V  
, T =125°C  
A
R
V
I =1.0A  
1.3  
F
F
t
t
t
(200V thru 400V)  
(600V)  
I =0.5A, I =1.0A, Recov. to 0.25A  
200  
300  
500  
ns  
rr  
F
R
I =0.5A, I =1.0A, Recov. to 0.25A  
ns  
rr  
rr  
F
R
(800V, 1000V)  
I =0.5A, I =1.0A, Recov. to 0.25A  
ns  
F
R
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
R0 (14-January 2003)  

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