Datasheet > CBR1F-D020SBKPBFREE

CBR1F-D020SBKPBFREE

更新时间： 2024-12-02 06:05:39

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	403K
描述
Bridge Rectifier Diode, 1A, 200V V(RRM),

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CBR1F-D020SBKPBFREE 数据手册

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CBR1F-D020S SERIES

www.centralsemi.com

SURFACE MOUNT

1 AMP FAST RECOVERY

SILICON BRIDGE RECTIFIER

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR1F-D020S

Series types are fast recovery, full wave bridge

rectifiers mounted in a durable epoxy surface mount

molded case, utilizing glass passivated chips.

MARKING: FULL PART NUMBER

SMDIP CASE

MAXIMUM RATINGS:

CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-

(T =25°C unless otherwise specified) SYMBOL D020S

D040S

D060S

600

420

1.0

D080S

D100S

1000

700

UNITS

Peak Repetitive Reverse Voltage

200

140

400

800

RRM

DC Blocking Voltage

400

800

RMS Reverse Voltage

280

560

R(RMS)

Average Forward Current (T =40°C)

Peak Forward Surge Current

A²s

FSM

I²t

Rating for Fusing (t<8.35ms)

3.74

Operating and Storage

Junction Temperature

T , T

stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

µA

V =Rated V

5.0

0.5

RRM

V =Rated V

, T =125°C

I =1.0A

1.3

I =0.5A, I =1.0A, Rec. to 0.25A (200V, 300V, 400V)

200

300

500

I =0.5A, I =1.0A, Rec. to 0.25A (600V)

I =0.5A, I =1.0A, Rec. to 0.25A (800V, 1000V)

V =4.0V, f=1.0MHz

R1 (4-January 2010)

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