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CBR1-D080SLEADFREE PDF预览

CBR1-D080SLEADFREE

更新时间: 2024-12-01 21:11:07
品牌 Logo 应用领域
CENTRAL 光电二极管
页数 文件大小 规格书
2页 403K
描述
Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, SURFACE MOUNT, PLASTIC, DIP-4

CBR1-D080SLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:R-PDSO-G4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.15
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

CBR1-D080SLEADFREE 数据手册

 浏览型号CBR1-D080SLEADFREE的Datasheet PDF文件第2页 
CBR1-D020S SERIES  
www.centralsemi.com  
SURFACE MOUNT  
1 AMP  
SILICON BRIDGE RECTIFIER  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBR1-D020S series  
types are silicon full wave bridge rectifiers mounted in a  
durable epoxy surface mount molded case, utilizing glass  
passivated chips.  
NOTE: Also available in Fast Recovery, please  
contact factory for details.  
MARKING: FULL PART NUMBER  
SMDIP CASE  
MAXIMUM RATINGS:  
A
CBR1-  
D020S  
CBR1-  
D040S  
CBR1-  
D060S  
CBR1- CBR1-  
D080S D100S  
(T =25°C unless otherwise noted)  
SYMBOL  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
RMS Reve  
V
200  
200  
140  
400  
400  
280  
600  
600  
420  
1.0  
50  
800  
800  
560  
1000  
1000  
700  
V
V
RRM  
V
R
V
V
R(RMS)  
Average Forward Current (T =50°C)  
A
Peak Forward Surge Current  
I
A
O
I
A
A2s  
FSM  
I2t  
Rating for Fusing (t<8.35ms)  
10  
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
µA  
I
I
V =Rated V  
10  
0.5  
1.1  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
mA  
V
R
R
A
V
I =1.0A  
F
F
C
V =4.0V, f=1.0MHz  
25  
pF  
J
R
R3 (4-January 2010)  

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