Datasheet > C3M0021120K

C3M0021120K

更新时间： 2024-12-01 01:24:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	926K
描述
Silicon Carbide Power MOSFET C3MTM MOSFET Technology

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中文翻译

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数据手册

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C3M0021120K 数据手册

V_DS

I_D

1200 V

100 A

25˚C

C3M0021120K

R_DS(on)

21 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•

3rd generation SiC MOSFET technology

TAB

Drain

Optimized package with separate driver source pin

8mm of creepage distance between drain and source

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Q_rr)

Halogen free, RoHS compliant

Beneﬁts

Drain

(Pin 1, TAB)

•

Reduce switching losses and minimize gate ringing

Higher system efﬁciency

Reduce cooling requirements

Increase power density

Increase system switching frequency

Gate

(Pin 4)

Driver

Source

(Pin 3)

Power

Source

(Pin 2)

Applications

•

Solar inverters

EV motor drive

High voltage DC/DC converters

Switched mode power supplies

Load switch

Marking

Part Number

Package

C3M0021120K

TO 247-4

C3M0021120K

Maximum Ratings (T_C= 25 ˚C unless otherwise speciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_D= 100 μA

1200

-8/+19

-4/+15

100

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

AC (f >1 Hz)

Static

Note 1

Note 2

Fig. 19

V_GS= 15 V, T_C= 25˚C

V_GS= 15 V, T_C= 100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

200

469

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

Power Dissipation

˚C

T_C=25˚C, T = 175 ˚C

Fig. 20

-40 to

+175

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mm (0.063”) from case for 10s

T_L

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0021120K Rev. -, 07-2019

12 3 4 5 6 7...11

中文翻译

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