Datasheet > C3M0075120D-A

C3M0075120D-A

更新时间： 2024-12-01 17:16:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	877K
描述
Wolfspeed's family of 1200 V Silicon Carbide (SiC) MOSFETs are optimized for use in high power app

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C3M0075120D-A 数据手册

V_DS

I_D

1200 V

30 A

25˚C

C3M0075120D

R_DS(on)

75 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•

C3M^TMSiC MOSFET technology

High blocking voltage with low On-resistance

High speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

Beneﬁts

•

Higher system efﬁciency

Reduced cooling requirements

Increased power density

Increased system switching frequency

Applications

•

Renewable energy

EV battery chargers

High voltage DC/DC converters

Switch Mode Power Supplies

Marking

C3M0075120

Part Number

Package

C3M0075120D

TO-247-3

Maximum Ratings (T_C= 25 ˚C unless otherwise speciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_D= 100 μA

1200

-8/+19

-4/+15

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

AC (f >1 Hz)

Static

Note: 1

Note: 2

Fig. 19

V_GS= 15 V, T_C= 25˚C

V_GS= 15 V, T_C= 100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

19.7

Fig. 22

Fig. 20

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

Power Dissipation

113.6

˚C

T_C=25˚C, T = 150 ˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mm (0.063”) from case for 10s

M3 or 6-32 screw

T_L

8.8

lbf-in

Mounting Torque

M_d

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0075120D Rev. A, 02-2019

12 3 4 5 6 7...10

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