Datasheet > C3M0075120J

C3M0075120J

更新时间： 2024-12-01 01:24:59

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1431K
描述
Silicon Carbide Power MOSFET C3M MOSFET Technology

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中文翻译

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数据手册

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C3M0075120J 数据手册

V_DS

I_D

1200 V

30 A

25˚C

C3M0075120J

R_DS(on)

75 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ C3M^TMSiC MOSFET technology

TAB

Drain

•ꢀ Low impedance package with driver source pin

•ꢀ 7mm of creepage distance between drain and source

•ꢀ High blocking voltage with low on-resistance

•ꢀ High-speed switching with low capacitances

•ꢀ Fast intrinsic diode with low reverse recovery (Q_rr)

•ꢀ Halogen free, RoHS compliant

Beneﬁts

Drain

(TAB)

•ꢀ Reduce switching losses and minimize gate ringing

•ꢀ Higherꢀsystemꢀefﬁciency

•ꢀ Reduce cooling requirements

•ꢀ Increase power density

Gate

(Pin 1)

•ꢀ Increase system switching frequency

Driver

Source

(Pin 2)

Power

Source

(Pin 3,4,5,6,7)

Applications

•ꢀ Renewable energy

•ꢀ EV battery chargers

•ꢀ High voltage DC/DC converters

•ꢀ Switch Mode Power Supplies

Marking

Part Number

Package

C3M0075120J

TO-263-7

C3M0075120J

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Unit

Symbol

Parameter

Drain - Source Voltage

Value

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

AC (f >1 Hz)

Static

1200

-8/+19

-4/+15

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

Note: 1

Note: 2

Fig. 19

V_GS= 15 V, T_C=ꢀ25˚C

V_GS= 15 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

19.7

Fig. 22

Fig. 20

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

Power Dissipation

113.6

˚C

T_C=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mm (0.063”) from case for 10s

T_L

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0075120J Rev. -, 07-2017

12 3 4 5 6 7...10

中文翻译

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