Datasheet > C3M0120100K

C3M0120100K

更新时间： 2024-12-01 01:25:55

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	1057K
描述
C3MTM SiC MOSFET technology

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中文翻译

获取价格

数据手册

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C3M0120100K 数据手册

V_DS

I_D

1000 V

22 A

25˚C

C3M0120100K

R_DS(on)

120 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ C3M^TMSiC MOSFET technology

TAB

Drain

•ꢀ Optimized package with separate driver source pin

•ꢀ 8mm of creepage distance between drain and source

•ꢀ High blocking voltage with low on-resistance

•ꢀ High-speed switching with low capacitances

•ꢀ Fast intrinsic diode with low reverse recovery (Q_rr)

•ꢀ Halogen free, RoHS compliant

Beneﬁts

Drain

(Pin 1, TAB)

•ꢀ Reduce switching losses and minimize gate ringing

•ꢀ Higherꢀsystemꢀefﬁciency

•ꢀ Reduce cooling requirements

•ꢀ Increase power density

Gate

(Pin 4)

•ꢀ Increase system switching frequency

Driver

Source

(Pin 3)

Power

Source

(Pin 2)

Applications

•ꢀ Renewable energy

•ꢀ EV battery chargers

•ꢀ High voltage DC/DC converters

•ꢀ Switch Mode Power Supplies

Marking

Part Number

Package

C3M0120100K

TO 247-4

C3M0120100K

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

AC (f >1 Hz)

Static

1000

-8/+19

-4/+15

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

Note: 1

Note: 2

Fig. 19

V_GS= 15 V, T_C=ꢀ25˚C

V_GS= 15 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

13.5

Fig. 22

Fig. 20

I_D(pulse)

P_D

Pulse width t_Plimited by T_jmax

Power Dissipation

˚C

T_C=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

260

1.6mm (0.063”) from case for 10s

T_L

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0120100K Rev. -, 12-2016

12 3 4 5 6 7...11

中文翻译

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