Datasheet > C3M0065100J

C3M0065100J

更新时间： 2024-12-01 01:24:59

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1370K
描述
Silicon Carbide Power MOSFET C3M MOSFET Technology

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中文翻译

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数据手册

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C3M0065100J 数据手册

V_DS

I_D

1000 V

35 A

25˚C

C3M0065100J

R_DS(on)

65 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ C3M^TMSiC MOSFET technology

TAB

Drain

•ꢀ Low parasitic inductance with separate driver source pin

•ꢀ 7mm of creepage distance between drain and source

•ꢀ High blocking voltage with low On-resistance

•ꢀ Fast intrinsic diode with low reverse recovery (Qrr)

•ꢀ Low output capacitance (60pF)

•ꢀ Halogen free, RoHS compliant

Beneﬁts

Drain

(TAB)

•ꢀ Reduce switching losses and minimize gate ringing

•ꢀ Higherꢀsystemꢀefﬁciency

•ꢀ Increase power density

•ꢀ Increase system switching frequency

Gate

(Pin 1)

Applications

Driver

Source

(Pin 2)

Power

Source

(Pin 3,4,5,6,7)

•ꢀ Renewable energy

•ꢀ EV battery chargers

•ꢀ High voltage DC/DC converters

•ꢀ Switch Mode Power Supplies

Marking

Part Number

Package

C3M0065100J

TO-263-7

C3M0065100J

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

1000

-8/+19

-4/+15

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage (dynamic)

Gate - Source Voltage (static)

AC (f >1 Hz)

Static

Note. 1

Note. 2

Fig. 19

V_GS= 15 V, T_C=ꢀ25˚C

V_GS= 15 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

22.5

Fig. 22

Fig. 20

I_D(pulse)

Pulse width t_Plimited by T_jmax

I_D= 22A, V_DD= 50V

Avalanche energy, Single pulse

Power Dissipation

110

E_AS

P_D

113.5

T_C=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

˚C

T , T_stg

260

1.6mm (0.063”) from case for 10s

T_L

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+19V

Note (2): MOSFET can also safely operate at 0/+15 V

C3M0065100J Rev. -, 04-2017

12 3 4 5 6 7...10

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