Datasheet > C3M0065090J

C3M0065090J

更新时间： 2024-12-01 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	1336K
描述
Silicon Carbide Power MOSFET

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中文翻译

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数据手册

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C3M0065090J 数据手册

V_DS

I_D

900 V

35 A

25˚C

C3M0065090J

R_DS(on)

65 mΩ

Silicon Carbide Power MOSFET

C3M^TMMOSFET Technology

N-Channel Enhancement Mode

Features

Package

•ꢀ New C3M SiC MOSFET technology

TAB

Drain

•ꢀ High blocking voltage with low On-resistance

•ꢀ High speed switching with low capacitances

•ꢀ New low impedance package with driver source

•ꢀ Fast intrinsic diode with low reverse recovery (Qrr)

•ꢀ Halogen free, RoHS compliant

Beneﬁts

Drain

(TAB)

•ꢀ Higherꢀsystemꢀefﬁciency

•ꢀ Reduced cooling requirements

•ꢀ Increased power density

DS S

•ꢀ Increased system switching frequency

Gate

(Pin 1)

Applications

Driver

Source

(Pin 2)

Power

Source

(Pin 3,4,5,6,7)

•ꢀ Renewable energy

•ꢀ EV battery chargers

•ꢀ High voltage DC/DC converters

•ꢀ Switch Mode Power Supplies

Part Number

Package

7L D2PAK

C3M0065090J

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Drain - Source Voltage

Value

Unit

Test Conditions

Note

V_GS= 0 V, I_Dꢀ=ꢀ100ꢀμA

900

-8/+18

-4/+15

V_DSmax

V_GSmax

V_GSop

Gate - Source Voltage

Absolute maximum values

Recommended operational values

Fig. 19

Fig. 22

V_GS= 15 V, T_C=ꢀ25˚C

V_GS= 15 V, T_C=ꢀ100˚C

Continuous Drain Current

Pulsed Drain Current

I_D

I_D(pulse)

Pulse width t_Plimited by T_jmax

I_D= 22A, V_DD= 50V

Avalanche energy, Single pulse

Power Dissipation

110

113

E_AS

P_D

T_C=25˚C,ꢀT ꢀ=ꢀ150ꢀ˚C

Fig. 20

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

˚C

T , T_stg

260

1.6mm (0.063”) from case for 10s

T_L

C3M0065090J Rev. A

12 3 4 5 6 7...10

中文翻译

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