Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV74W series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
VR = 300 V/ 400 V/ 500 V
a1
1
a2
3
VF ≤ 1.12 V
IO(AV) = 30 A
trr ≤ 60 ns
k
2
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
anode 1
cathode
1
2
The BYV74W series is supplied in
the conventional leaded SOT429
(TO247) package.
3
anode 2
cathode
tab
2
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYV74W
-300
300
300
300
-400
400
400
400
-500
500
500
500
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
-
-
-
V
V
V
Tmb ≤ 136˚C
IO(AV)
IFRM
IFSM
Average rectified output current square wave; δ = 0.5;
-
30
A
(both diodes conducting)1
Tmb ≤ 94 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
30
A
per diode
Non-repetitive peak forward
current per diode.
Tmb ≤ 94 ˚C
t = 10 ms
-
-
150
160
A
A
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to per diode
-
-
-
-
-
45
2.4
1.4
-
K/W
K/W
K/W
heatsink
both diodes conducting
Rth j-a
Thermal resistance junction to in free air.
ambient
1 Neglecting switching and reverse current losses.
April 1998
1
Rev 1.000