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BYV74W

更新时间: 2024-11-11 22:08:47
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恩智浦 - NXP 整流二极管
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5页 54K
描述
Dual rectifier diodes ultrafast

BYV74W 数据手册

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Philips Semiconductors  
Product specification  
Dual rectifier diodes  
ultrafast  
BYV74W series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• High thermal cycling performance  
• Low thermal resistance  
VR = 300 V/ 400 V/ 500 V  
a1  
1
a2  
3
VF 1.12 V  
IO(AV) = 30 A  
trr 60 ns  
k
2
GENERAL DESCRIPTION  
PINNING  
SOT429 (TO247)  
Dual, common cathode, ultra-fast,  
epitaxial rectifier diodes intended  
for use as output rectifiers in high  
frequency switched mode power  
supplies.  
PIN  
DESCRIPTION  
anode 1  
cathode  
1
2
The BYV74W series is supplied in  
the conventional leaded SOT429  
(TO247) package.  
3
anode 2  
cathode  
tab  
2
1
3
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV74W  
-300  
300  
300  
300  
-400  
400  
400  
400  
-500  
500  
500  
500  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
Crest working reverse voltage  
Continuous reverse voltage  
-
-
-
V
V
V
Tmb 136˚C  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave; δ = 0.5;  
-
30  
A
(both diodes conducting)1  
Tmb 94 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
30  
A
per diode  
Non-repetitive peak forward  
current per diode.  
Tmb 94 ˚C  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRRM(max)  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-hs  
Thermal resistance junction to per diode  
-
-
-
-
-
45  
2.4  
1.4  
-
K/W  
K/W  
K/W  
heatsink  
both diodes conducting  
Rth j-a  
Thermal resistance junction to in free air.  
ambient  
1 Neglecting switching and reverse current losses.  
April 1998  
1
Rev 1.000  

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