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BYV79E-150/B PDF预览

BYV79E-150/B

更新时间: 2024-10-01 23:39:03
品牌 Logo 应用领域
其他 - ETC 二极管超快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 40K
描述
DIODE ULTRA FAST RECOVERY

BYV79E-150/B 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV79E series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
VR = 150 V/ 200 V  
VF 0.9 V  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Low thermal resistance  
k
1
a
2
IF(AV) = 14 A  
IRRM 0.2 A  
trr 30 ns  
GENERAL DESCRIPTION  
PINNING  
SOD59 (TO220AC)  
Ultra-fast, epitaxial rectifier diodes  
intended for use as output rectifiers  
in high frequency switched mode  
power supplies.  
PIN  
DESCRIPTION  
cathode  
anode  
cathode  
tab  
1
2
The BYV79E series is supplied in  
the conventional leaded SOD59  
(TO220AC) package.  
tab  
1
2
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
BYV79E  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
Tmb 145˚C  
IF(AV)  
IFRM  
IFSM  
Average forward current1  
square wave  
-
-
14  
28  
A
A
δ = 0.5; Tmb 120 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
T
mb 120 ˚C  
Non-repetitive peak forward  
current  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
IRRM  
IRSM  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
-
-
0.2  
0.2  
A
A
Non-repetitive peak reverse  
current  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1. Neglecting switching and reverse current losses.  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge  
capacitor voltage  
Human body model;  
C = 250 pF; R = 1.5 kΩ  
-
8
kV  
July 1998  
1
Rev 1.200  

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