Datasheet > BYV74WSERIES

BYV74WSERIES

更新时间： 2024-10-01 23:39:03

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
页数	文件大小	规格书
5页	54K
描述
Dual rectifier diodes ultrafast

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BYV74WSERIES 数据手册

Philips Semiconductors

Product specification

Dual rectifier diodes

ultrafast

BYV74W series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• High thermal cycling performance

• Low thermal resistance

V_R= 300 V/ 400 V/ 500 V

V_F≤ 1.12 V

I_O(AV)= 30 A

t_rr≤ 60 ns

GENERAL DESCRIPTION

PINNING

SOT429 (TO247)

Dual, common cathode, ultra-fast,

epitaxial rectifier diodes intended

for use as output rectifiers in high

frequency switched mode power

supplies.

DESCRIPTION

anode 1

cathode

The BYV74W series is supplied in

the conventional leaded SOT429

(TO247) package.

anode 2

cathode

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS

MIN.

MAX.

UNIT

BYV74W

-300

300

-400

400

-500

500

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

T_mb≤ 136˚C

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave; δ = 0.5;

(both diodes conducting)¹

T_mb≤ 94 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode.

T_mb≤ 94 ˚C

t = 10 ms

150

160

t = 8.3 ms

sinusoidal; with reapplied

V_RRM(max)

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-hs}

Thermal resistance junction to per diode

2.4

1.4

K/W

heatsink

both diodes conducting

R_{th j-a}

Thermal resistance junction to in free air.

ambient

1 Neglecting switching and reverse current losses.

April 1998

Rev 1.000

12 3 4 5

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