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BYT62_10 PDF预览

BYT62_10

更新时间: 2024-11-07 09:03:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 108K
描述
Standard Avalanche Sinterglass Diode

BYT62_10 数据手册

 浏览型号BYT62_10的Datasheet PDF文件第2页浏览型号BYT62_10的Datasheet PDF文件第3页 
BYT62  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Controlled avalanche characteristics  
• Low reverse current  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
949539  
• Halogen-free according to IEC 61249-2-21  
definition  
MECHANICAL DATA  
APPLICATIONS  
Case: SOD-57  
• High voltage rectification diode  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
R = 2400 V; IFAV = 350 mA  
PACKAGE  
BYT62  
V
SOD-57  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage = repetitive peak reverse  
voltage  
See electrical characteristics  
VR = VRRM  
2400  
V
Peak forward surge current  
Average forward current  
tp = 10 ms, half sine wave  
IFSM  
IFAV  
ER  
10  
350  
A
RthJA 60 K/W  
mA  
mJ  
°C  
Non repetitive reverse avalanche energy  
Junction temperature  
I
(BR)R = 1 A, inductive load  
60  
Tj  
175  
Storage temperature range  
Tstg  
- 55 to + 190  
°C  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
K/W  
Junction ambient  
Lead length l = 10 mm, TL = constant  
RthJA  
60  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX  
3
UNIT  
IF = 200 mA  
VF  
VF  
-
-
-
-
-
-
-
-
-
-
V
V
IF = 1 A  
-
3.6  
2.9  
4
Forward voltage  
IF = 1 A, Tj = 175 °C  
IF = 1 A, Tj = - 40 °C  
VF  
-
V
VF  
-
V
VR = VRRM  
IR  
-
5
μA  
μA  
nA  
V
Reverse current  
VR = VRRM, Tj = 175 °C  
VR = VRRM, Tj = - 40 °C  
IR = 100 μA  
IR  
-
250  
400  
-
IR  
-
2500  
-
Reverse breakdown voltage  
Reverse recovery time  
V(BR)R  
trr  
lF = 0.5 A, lR = 1 A, iR = 0.25 A  
5
μs  
www.vishay.com  
156  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 86033  
Rev. 1.7, 25-Aug-10  

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