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BYT77-TAP PDF预览

BYT77-TAP

更新时间: 2024-11-28 19:28:59
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
4页 116K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYT77-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:11 weeks
风险等级:5.71应用:FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
最大反向电流:5 µA最大反向恢复时间:0.25 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYT77-TAP 数据手册

 浏览型号BYT77-TAP的Datasheet PDF文件第2页浏览型号BYT77-TAP的Datasheet PDF文件第3页浏览型号BYT77-TAP的Datasheet PDF文件第4页 
BYT77, BYT78  
Vishay Semiconductors  
www.vishay.com  
Fast Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• Soft recovery characteristics  
• Controlled avalanche characteristics  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949588  
APPLICATIONS  
MECHANICAL DATA  
• Fast “soft recovery” rectification diode  
Case: SOD-64  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 858 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYT78  
BYT78-TR  
2500 per 10" tape and reel  
2500 per ammopack  
12 500  
12 500  
BYT78  
BYT78-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-64  
BYT77  
VR = 800 V; IF(AV) = 3 A  
BYT78  
VR = 1000 V; IF(AV) = 3 A  
SOD-64  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BYT77  
BYT78  
SYMBOL  
VALUE  
UNIT  
V
V
R = VRRM  
R = VRRM  
IFSM  
800  
Reverse voltage = repetitive peak reverse  
voltage  
See electrical characteristics  
V
1000  
V
Peak forward surge current  
tp = 10 ms, half sine wave  
100  
A
Average forward current  
Tamb 45 °C  
IF(AV)  
3
10  
A
Non repetitive reverse avalanche energy  
Junction and storage temperature range  
I(BR)R = 0.4 A  
ER  
mJ  
°C  
Tj = Tstg  
- 55 to + 175  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Lead length l = 10 mm, TL = constant  
On PC board with spacing 25 mm  
RthJA  
25  
70  
K/W  
K/W  
Junction ambient  
RthJA  
Rev. 1.9, 04-Sep-12  
Document Number: 86034  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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