5秒后页面跳转
BYT62-TR PDF预览

BYT62-TR

更新时间: 2024-11-28 12:58:51
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
3页 40K
描述
BYT62 Standard Avalanche Sinterglass Diode

BYT62-TR 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:E-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.7
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.9 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:10 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.35 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:2400 V最大反向恢复时间:5 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYT62-TR 数据手册

 浏览型号BYT62-TR的Datasheet PDF文件第2页浏览型号BYT62-TR的Datasheet PDF文件第3页 
BYT62  
Vishay Telefunken  
Silicon Mesa Rectifier  
Features  
Glass passivated junction  
Hermetically sealed package  
Controlled avalanche characteristic  
Low reverse current  
Applications  
94 9539  
High voltage rectifier  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
2400  
Unit  
V
V
R
=Repetitive peak reverse voltage  
=V  
RRM  
Peak forward surge current  
Average forward current  
t =10ms, half sinewave  
I
I
10  
350  
60  
A
mA  
mJ  
p
FSM  
T
amb  
=25 C, R  
60K/W  
FAV  
thJA  
Non repetitive reverse  
avalanche energy  
I
=1A, inductive load  
E
R
(BR)R  
Junction temperature  
Storage temperature range  
T
T
stg  
175  
–55...+190  
C
C
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
60  
Unit  
K/W  
l=10mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
I =200mA  
V
V
V
V
3.0  
3.6  
2.9  
4.0  
5
V
V
V
V
F
F
F
F
F
I =1A  
F
I =1A, T =175 C  
F
j
I =1A, T =–40 C  
F
j
Reverse current  
V =V  
I
I
I
A
R
RRM  
RRM  
RRM  
R
V =V  
, T =175 C  
, T =–40 C  
j
250  
400  
A
nA  
V
R
j
R
R
V =V  
R
Reverse breakdown voltage I =100 A  
V
2500  
R
(BR)R  
Reverse recovery time  
I =0.5A, I =1A, i =0.25A  
t
rr  
5
s
F
R
R
Document Number 86033  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  

与BYT62-TR相关器件

型号 品牌 获取价格 描述 数据表
BYT71 ETC

获取价格

FAST RECOVERY RECTIFIER DIODES
BYT71(F)-800 ETC

获取价格

FAST RECOVERY RECTIFIER DIODES
BYT71-100 STMICROELECTRONICS

获取价格

RECTIFIER DIODE,100V V(RRM),TO-220AC
BYT71-100A STMICROELECTRONICS

获取价格

6A, 100V, SILICON, RECTIFIER DIODE
BYT71-200 STMICROELECTRONICS

获取价格

RECTIFIER DIODE,200V V(RRM),TO-220AC
BYT71-200A STMICROELECTRONICS

获取价格

6A, 200V, SILICON, RECTIFIER DIODE
BYT71-400 STMICROELECTRONICS

获取价格

RECTIFIER DIODE,400V V(RRM),TO-220AC
BYT71-400A STMICROELECTRONICS

获取价格

6A, 400V, SILICON, RECTIFIER DIODE
BYT71-600 ETC

获取价格

FAST RECOVERY RECTIFIER DIODES
BYT71-600A STMICROELECTRONICS

获取价格

6A, 600V, SILICON, RECTIFIER DIODE