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BYT62-TAP PDF预览

BYT62-TAP

更新时间: 2024-11-28 19:55:47
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 109K
描述
BYT62 Standard Avalanche Sinterglass Diode

BYT62-TAP 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:E-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.54
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.9 VJESD-30 代码:E-LALF-W2
JESD-609代码:e2湿度敏感等级:1
最大非重复峰值正向电流:10 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.35 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:2400 V最大反向恢复时间:5 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Tin/Silver (Sn/Ag)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYT62-TAP 数据手册

 浏览型号BYT62-TAP的Datasheet PDF文件第2页浏览型号BYT62-TAP的Datasheet PDF文件第3页浏览型号BYT62-TAP的Datasheet PDF文件第4页 
BYT62  
Vishay Semiconductors  
www.vishay.com  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Controlled avalanche characteristics  
• Low reverse current  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949539  
APPLICATIONS  
MECHANICAL DATA  
• High voltage rectification diode  
Case: SOD-57  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYT62  
BYT62-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYT62  
BYT62-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
BYT62  
V
R = 2400 V; IF(AV) = 350 mA  
SOD-57  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Reverse voltage = repetitive peak reverse  
voltage  
See electrical characteristics  
VR = VRRM  
2400  
V
Peak forward surge current  
Average forward current  
tp = 10 ms, half sine wave  
IFSM  
IF(AV)  
ER  
10  
350  
A
RthJA 60 K/W  
mA  
mJ  
°C  
Non repetitive reverse avalanche energy  
Junction temperature  
I(BR)R = 1 A, inductive load  
60  
Tj  
175  
Storage temperature range  
Tstg  
- 55 to + 190  
°C  
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Junction ambient  
Lead length l = 10 mm, TL = constant  
RthJA  
60  
K/W  
Rev. 1.8, 11-Sep-12  
Document Number: 86033  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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