BYT62

更新时间： 2024-11-27 22:08:55

品牌	Logo	应用领域
威世 - VISHAY		整流二极管
页数	文件大小	规格书
3页	40K
描述
Silicon Mesa Rectifier

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中文翻译

获取价格

数据手册

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BYT62 数据手册

BYT62

Vishay Telefunken

Silicon Mesa Rectifier

Features

Glass passivated junction

Hermetically sealed package

Controlled avalanche characteristic

Low reverse current

Applications

94 9539

High voltage rectifier

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage

Test Conditions

Type

Symbol

Value

2400

Unit

=Repetitive peak reverse voltage

RRM

Peak forward surge current

Average forward current

t =10ms, half sinewave

350

FSM

amb

=25 C, R

60K/W

FAV

thJA

Non repetitive reverse

avalanche energy

=1A, inductive load

(BR)R

Junction temperature

Storage temperature range

stg

175

–55...+190

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

Unit

K/W

l=10mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =200mA

3.0

3.6

2.9

4.0

I =1A

I =1A, T =175 C

I =1A, T =–40 C

Reverse current

V =V

RRM

V =V

, T =175 C

, T =–40 C

250

400

V =V

Reverse breakdown voltage I =100 A

2500

(BR)R

Reverse recovery time

I =0.5A, I =1A, i =0.25A

Document Number 86033

Rev. 2, 24-Jun-98

www.vishay.de • FaxBack +1-408-970-5600

1 (3)

12 3

中文翻译

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