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BYS11-100 PDF预览

BYS11-100

更新时间: 2024-11-11 19:46:47
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
2页 42K
描述
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Diode

BYS11-100 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.83
其他特性:LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYS11-100 数据手册

 浏览型号BYS11-100的Datasheet PDF文件第2页 
BYS11-90 and BYS11-100  
Vishay Semiconductors  
Schottky Barrier Rectifiers  
DO-214AC  
(SMA)  
Reverse Voltage 90 to 100V  
Forward Current 1.0A  
Cathode Band  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
Mounting Pad Layout  
0.177 (4.50)  
0.157 (3.99)  
0.066 MIN.  
(1.68 MIN.)  
0.094 MAX.  
(2.38 MAX.)  
Dimensions in inches  
and (millimeters)  
0.012 (0.305)  
0.006 (0.152)  
0.090 (2.29)  
0.078 (1.98)  
0.052 MIN.  
(1.32 MIN.)  
0.060 (1.52)  
0.030 (0.76)  
0.220  
(5.58) REF  
0.008 (0.203)  
MAX.  
0.208 (5.28)  
0.194 (4.93)  
Features  
• Low power loss, high efficiency  
• Low profile surface mount package  
• Built-in strain relief  
• Very low switching losses  
• Low reverse current  
Mechanical Data  
Case: JEDEC DO-214AC molded plastic body  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
• High surge capability  
• Guardring for overvoltage protection  
Polarity: Color band denotes cathode end  
Weight: 0.002oz., 0.064g  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
BYS11-90  
BYS11-100  
Unit  
Device marking code  
BYS  
109  
BYS  
110  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current  
VRRM  
IF(AV)  
90  
100  
V
A
1.5  
Peak forward surge current single half  
sine-wave superimposed on rated load  
at 8.3ms  
at 10ms  
40  
30  
IFSM  
A
150(1)  
125(2)  
100(3)  
Maximum Thermal Resistance – Junction Ambient  
R
θJA  
°C/W  
Voltage rate of change (VR)  
dv/dt  
10,000  
V/µs  
°C  
Junction and storage temperature range  
TJ, TSTG  
–55 to +150  
Electrical Characteristics (TA = 25°C unless otherwise noted)  
Maximum instantaneous forward voltage at 1A(4)  
VF  
750  
mV  
Maximum DC reverse current  
at VRRM  
TJ = 25°C  
TJ = 100°C  
100  
1
µA  
mA  
IR  
(4)  
Notes: (1) Mounted on epoxy-glass hard tissue  
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu  
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu  
(4) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 86014  
15-Jan-04  
www.vishay.com  
1

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