Datasheet > BYS11-90_08

BYS11-90_08

更新时间： 2022-12-17 03:17:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	356K
描述
Surface Mount Schottky Barrier Rectifier

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BYS11-90_08 数据手册

BYS11-90

Vishay General Semiconductor

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Very low switching losses

• High surge capability

DO-214AC (SMA)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, oring diode, dc-to-dc

converters and reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

1.5 A

90 V

40 A

MECHANICAL DATA

Case: DO-214AC (SMA)

V_F

0.75 V

150 °C

Epoxy meets UL 94V-0 flammability rating

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYS11-90

UNIT

BYS

109

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

V_RRM

I_F(AV)

1.5

Peak forward surge current single half sine-wave

superimposed on rated load

8.3 ms

10 ms

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/µs

°C

Junction and storage temperature range

T_J, T_STG

- 55 to + 150

Document Number: 86014

Revision: 21-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

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