Datasheet > BYS11-90-HE3

BYS11-90-HE3

更新时间： 2024-02-25 21:07:52

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	316K
描述
DIODE 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Rectifier Diode

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中文翻译

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技术参数
数据手册

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BYS11-90-HE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	ROHS COMPLIANT, PLASTIC, SMA, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

BYS11-90-HE3 数据手册

BYS11-90

Vishay General Semiconductor

Surface Mount Schottky Barrier Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

1.5 A

90 V

40 A

V_F

0.75 V

150 °C

T_jmax.

DO-214AC (SMA)

Features

Mechanical Data

• Low profile package

Case: DO-214AC (SMA)

• Ideal for automated placement

Epoxy meets UL-94V-0 Flammability rating

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Very low switching losses

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• High surge capability

Polarity: Color band denotes the cathode end

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Typical Applications

For use in high frequency inverters, switching power

supplies, freewheeling diodes, Oring diode, dc-to-dc

converters and reverse battery protection.

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol

BYS11-90

Unit

Device marking code

BYS

109

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

V_RRM

I_F(AV)

I_FSM

1.5

Peak forward surge current single half sine-wave

superimposed on rated load

at 8.3 ms

at 10 ms

Voltage rate of change (rated V_R)

dv/dt

10000

V/µs

°C

Junction and storage temperature range

T_J, T_STG

- 55 to + 150

Document Number 86014

15-Aug-05

www.vishay.com

12 3 4

中文翻译

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