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BYS11-90HE3_A/H PDF预览

BYS11-90HE3_A/H

更新时间: 2024-09-25 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管瞄准线功效
页数 文件大小 规格书
4页 356K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 90V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

BYS11-90HE3_A/H 技术参数

生命周期:Active包装说明:SMA, 2 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:12 weeks
风险等级:5.72Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:40 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
参考标准:AEC-Q101最大重复峰值反向电压:90 V
最大反向电流:100 µA表面贴装:YES
技术:SCHOTTKY端子形式:C BEND
端子位置:DUALBase Number Matches:1

BYS11-90HE3_A/H 数据手册

 浏览型号BYS11-90HE3_A/H的Datasheet PDF文件第2页浏览型号BYS11-90HE3_A/H的Datasheet PDF文件第3页浏览型号BYS11-90HE3_A/H的Datasheet PDF文件第4页 
BYS11-90  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low switching losses  
• High surge capability  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, oring diode, dc-to-dc  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.5 A  
90 V  
40 A  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
VF  
0.75 V  
150 °C  
Epoxy meets UL 94V-0 flammability rating  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BYS11-90  
UNIT  
BYS  
109  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current  
VRRM  
IF(AV)  
90  
V
A
1.5  
Peak forward surge current single half sine-wave  
superimposed on rated load  
8.3 ms  
10 ms  
40  
30  
IFSM  
A
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
°C  
Junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 86014  
Revision: 21-Jan-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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