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BYS11-90-HE3/TR PDF预览

BYS11-90-HE3/TR

更新时间: 2024-11-11 21:16:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 81K
描述
DIODE 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

BYS11-90-HE3/TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:ROHS COMPLIANT, PLASTIC, SMA, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.66
Base Number Matches:1

BYS11-90-HE3/TR 数据手册

 浏览型号BYS11-90-HE3/TR的Datasheet PDF文件第2页浏览型号BYS11-90-HE3/TR的Datasheet PDF文件第3页浏览型号BYS11-90-HE3/TR的Datasheet PDF文件第4页 
BYS11-90  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low switching losses  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
DO-214AC (SMA)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, oring diode, DC/DC  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
IF(AV)  
VRRM  
IFSM  
1.5 A  
90 V  
40 A  
VF  
0.75 V  
150 °C  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYS11-90  
BYS109  
90  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current  
VRRM  
IF(AV)  
V
A
1.5  
8.3 ms  
10 ms  
40  
Peak forward surge current single half sine-wave  
superimposed on rated load  
IFSM  
A
30  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Reivision: 26-Mar-12  
Document Number: 86014  
1
For technical questions within your region: DiodessAmericas@vishay.com, DiodessAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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