BYS11-90

更新时间： 2024-11-10 22:08:59

品牌	Logo	应用领域
威世 - VISHAY		二极管光电二极管瞄准线功效
页数	文件大小	规格书
4页	73K
描述
Schottky Barrier Rectifier

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中文翻译

获取价格

数据手册

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BYS11-90 数据手册

BYS11–90

Vishay Semiconductors

Schottky Barrier Rectifier

Features

High efficiency

Low power losses

Very low switching losses

Low reverse current

High surge capability

15 811

Applications

Polarity protection

Low voltage, high frequency rectifiers

Absolute Maximum Ratings

T = 25 C

Parameter

Reverse voltage=

Repetitive peak reverse voltage

Test Conditions

Type

Symbol

V =

Value

Unit

RRM

Peak forward surge current

Average forward current

t =10ms, half sinewave

1.5

FSM

FAV

Junction and storage

temperature range

T =T

–55...+150

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Test Conditions

Symbol

Value

150

125

100

Unit

K/W

T =constant

thJL

mounted on epoxy–glass hard tissue

Junction ambient mounted on epoxy–glass hard tissue, 50mm 35 m Cu

thJA

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

750

100

V =V

RRM

Reverse current

V =V

, T =100 C

RRM

www.vishay.com

1 (4)

Document Number 86014

Rev. 3, 08-Sep-00

12 3 4

中文翻译

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