生命周期: | Obsolete | 包装说明: | O-LELF-R2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | JESD-30 代码: | O-LELF-R2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
最大输出电流: | 0.8 A | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 400 V |
最大反向恢复时间: | 0.05 µs | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | WRAP AROUND |
端子位置: | END | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BYG80 | NXP |
获取价格 |
Ultra fast low-loss controlled avalanche rectifiers |
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BYG80A | NXP |
获取价格 |
Ultra fast low-loss controlled avalanche rectifiers |
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BYG80A-T | NXP |
获取价格 |
DIODE 1.6 A, 50 V, SILICON, RECTIFIER DIODE, Rectifier Diode |
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BYG80B | NXP |
获取价格 |
Ultra fast low-loss controlled avalanche rectifiers |
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BYG80B | PHILIPS |
获取价格 |
Rectifier Diode, 1 Element, 2.4A, 100V V(RRM), |
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BYG80B/T3 | NXP |
获取价格 |
DIODE 0.95 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, MSA474, 2 PIN, Signal Diode |
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BYG80B-T | NXP |
获取价格 |
DIODE 1.6 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode |
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BYG80BT/R | NXP |
获取价格 |
DIODE 0.95 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, MSA474, 2 PIN, Signal Diode |
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BYG80C | NXP |
获取价格 |
Ultra fast low-loss controlled avalanche rectifiers |
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BYG80C-T | NXP |
获取价格 |
DIODE 1.6 A, 150 V, SILICON, RECTIFIER DIODE, Rectifier Diode |
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