Datasheet > BYG21M

BYG21M

更新时间： 2024-11-14 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管光电二极管软恢复二极管快速软恢复二极管
页数	文件大小	规格书
3页	616K
描述
1.5A patch fast recovery diode 1000V SMA series

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中文翻译

获取价格

数据手册

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BYG21M 数据手册

BYG21K - BYG21M

FAST SILICON MESA SMD RECTIFIER DIODE

VOLTAGE RANGE: 8 00 - 1000V

CURRENT: 1.5 A

Features

Glass passivated junction

Low reverse current

Soft recovery characteristics

Fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA(DO-214AC), Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Mounting Position: Any

Weight: 0.064 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

Parameter

Reverse voltage

Test Conditions

Type

BYG21K

Symbol

V_R=V_RRM

Value

800

Unit

=Repetitive peak reverse voltage

BYG21M V_R=V_RRM

I_FSM

1000

Peak forward surge current

t_p=10ms,

half sinewave

Average forward current

Junction and storage

temperature range

I_FAV

T_j=T_stg

1.5

–55...+150

Pulse energy in avalanche mode, I_(BR)R=1A, T_j=25 C

non repetitive

E_R

(inductive load switch off)

T = 25 C

Maximum Thermal Resistance

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T_L=const.

R_thJL

R_thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm²35 m Cu

mounted on Al–oxid–ceramic (Al₂O₃), 50mm²35 m Cu

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