Datasheet > BYG22A

BYG22A

更新时间： 2024-11-14 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	358K
描述
2A patch fast recovery diode 50V SMA series

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中文翻译

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数据手册

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BYG22A 数据手册

BYG22A - BYG22D

SUPER FAST SILICON MESA SMD RECTIFIER DIODE

VOLTAGE RANGE: 50 - 200V

CURRENT: 2.0 A

Features

Controlled avalanche characteristic

Glass passivated junction

Low reverse current

Low forward voltage

Soft recovery characteristic

Very fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

SMA(DO-214AC)

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

100

200

Unit

BYG22A

BYG22B

BYG22D

V_R=V_RRM

I_FSM

Peak forward surge current

Average forward current

Junction and storage

temperature range

t_p=10ms,

half sinewave

I_FAV

T_j=T_stg

–55...+150

Pulse energy in avalanche mode, I_(BR)R=1A, T_j=25 C

non repetitive

E_R

(inductive load switch off)

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T_L=const.

R_thJL

R_thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm²35 m Cu

mounted on Al–oxid–ceramic (Al₂O₃), 50mm²35 m Cu

Electrical CharacteristicsjT = 25C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I_F=1A

I_F=2A

V_R=V_RRM

V_F

I_R

1.1

Reverse current

V_R=V_RRM, T_j=100 C

Reverse recovery time I_F=0.5A, I_R=1A, i_R=0.25A

I_R

t_rr

1 of 2

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