Datasheet > BYG22B

BYG22B

更新时间： 2024-11-14 12:21:43

品牌	Logo	应用领域
台芯 - TAYCHIPST		二极管光电二极管局域网超快速恢复二极管
页数	文件大小	规格书
2页	3891K
描述
Super Fast Silicon Mesa SMD Rectifier

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中文翻译

获取价格

数据手册

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BYG22B 数据手册

BYG22A THRU BYG22D

50V-200V

2.0A

Super Fast Silicon Mesa SMD Rectifier

FEATURES

Controlled avalanche characteristic

Glass passivated junction

Low reverse current

Low forward voltage

Soft recovery characteristic

Very fast reverse recovery time

Good switching characteristics

Wave and reflow solderable

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

Value

100

200

Unit

BYG22A

BYG22B

BYG22D

V =V

RRM

V =V

Peak forward surge current

Average forward current

Junction and storage

temperature range

t =10ms,

half sinewave

FSM

FAV

T =T

–55...+150

stg

Pulse energy in avalanche mode,

non repetitive

=1A, T =25 C

(BR)R

(inductive load switch off)

Maximum Thermal Resistance

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T =const.

thJL

thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm 35 m Cu

mounted on Al–oxid–ceramic (Al O ), 50mm 35 m Cu

Electrical Characteristics

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =1A

1.1

I =2A

Reverse current

V =V

RRM

, T =100 C

Reverse recovery time I =0.5A, I =1A, i =0.25A

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Web Site: www.taychipst.com

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