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BYG22AHE3/TR PDF预览

BYG22AHE3/TR

更新时间: 2024-11-14 06:44:51
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
5页 109K
描述
Ultrafast Avalanche SMD Rectifier

BYG22AHE3/TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.35
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:ULTRA FAST SOFT RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:35 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BYG22AHE3/TR 数据手册

 浏览型号BYG22AHE3/TR的Datasheet PDF文件第2页浏览型号BYG22AHE3/TR的Datasheet PDF文件第3页浏览型号BYG22AHE3/TR的Datasheet PDF文件第4页浏览型号BYG22AHE3/TR的Datasheet PDF文件第5页 
BYG22A thru BYG22D  
Vishay General Semiconductor  
Ultrafast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated junction  
• Low reverse current  
• Low forward voltage  
• Soft recovery characteristic  
• Ultra fast reverse recovery time  
DO-214AC (SMA)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification and  
freewheeling application in switching mode converters  
and inverters for consumer, computer, automotive and  
telecommunication.  
IF(AV)  
2 A  
VRRM  
IFSM  
IR  
50 V to 200 V  
35 A  
1.0 µA  
1.1 V  
MECHANICAL DATA  
VF  
Case: DO-214AC (SMA)  
trr  
25 ns  
Epoxy meets UL 94V-0 flammability rating  
ER  
20 mJ  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for highreliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
BYG22A  
BYG22A  
50  
BYG22B  
BYG22B  
100  
BYG22D  
BYG22D  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
V
A
2.0  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
35  
A
Pulse energy in avalanche mode,  
non repetitive (inductive load switch off)  
ER  
20  
mJ  
°C  
I
(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range TJ, TSTG  
- 55 to + 150  
Document Number: 88959  
Revision: 27-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

BYG22AHE3/TR 替代型号

型号 品牌 替代类型 描述 数据表
BYG22D-E3/TR VISHAY

完全替代

DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
RS2B TAITRON

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