Datasheet > BYG22A-TR3

BYG22A-TR3

更新时间： 2024-11-14 12:55:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	94K
描述
Ultrafast Avalanche SMD Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BYG22A-TR3 数据手册

BYG22A thru BYG22D

Vishay General Semiconductor

www.vishay.com

Ultrafast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• Low forward voltage

• Soft recovery characteristic

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

I_R

50 V to 200 V

35 A

MECHANICAL DATA

Case: DO-214AC (SMA)

1.0 μA

1.1 V

V_F

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

t_rr

25 ns

E_R

20 mJ

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYG22A

BYG22B

100

BYG22D

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

2.0

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

E_R

°C

I_(BR)R= 1 A, T_J= 25 °C

Operating junction and storage temperature range T_J, T_STG

- 55 to + 150

Revision: 21-Dec-11

Document Number: 88959

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与BYG22A-TR3相关器件

型号	品牌	获取价格	描述	数据表
BYG22B	VISHAY	获取价格	Super Fast Silicon Mesa SMD Rectifier
BYG22B	SUNMATE	获取价格	2A patch fast recovery diode 100V SMA series
BYG22B	TAYCHIPST	获取价格	Super Fast Silicon Mesa SMD Rectifier
BYG22B	TEMIC	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC,
BYG22B	LGE	获取价格	超快恢复二极管
BYG22B-E3	VISHAY	获取价格	DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214, PLASTIC, SIMILAR TO SMA, 2 PIN, Rectif
BYG22B-E3/TR	VISHAY	获取价格	DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
BYG22B-E3/TR3	VISHAY	获取价格	DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
BYG22BHE3/TR	VISHAY	获取价格	DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,
BYG22B-HE3/TR	VISHAY	获取价格	DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN,

与BYG22A-TR3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

1
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

1
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

BYG22A-TR3

BYG22A-TR3 数据手册

与BYG22A-TR3相关器件

与BYG22A-TR3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BYG22A-TR3

BYG22A-TR3 数据手册

与BYG22A-TR3相关器件

与BYG22A-TR3相关文章

您还可以找

您在本页遇到什么问题？