Datasheet > BYG22ATR3

BYG22ATR3

更新时间： 2024-02-02 10:17:22

品牌	Logo	应用领域
威世 - VISHAY		二极管光电二极管局域网超快速软恢复二极管
页数	文件大小	规格书
5页	94K
描述
Ultrafast Avalanche SMD Rectifier

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BYG22ATR3 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.4	应用：	SUPER FAST SOFT RECOVERY
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PDSO-C2
最大非重复峰值正向电流：	35 A	元件数量：	1
相数：	1	端子数量：	2
最大输出电流：	2 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	最大重复峰值反向电压：	50 V
最大反向恢复时间：	0.025 µs	表面贴装：	YES
技术：	AVALANCHE	端子形式：	C BEND
端子位置：	DUAL

BYG22ATR3 数据手册

BYG22A thru BYG22D

Vishay General Semiconductor

www.vishay.com

Ultrafast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• Low forward voltage

• Soft recovery characteristic

• Ultra fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and freewheeling

application in switching mode converters and inverters for

consumer, computer, automotive and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

V_RRM

I_FSM

I_R

50 V to 200 V

35 A

MECHANICAL DATA

Case: DO-214AC (SMA)

1.0 μA

1.1 V

V_F

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

t_rr

25 ns

E_R

20 mJ

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYG22A

BYG22B

100

BYG22D

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

2.0

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load

I_FSM

Pulse energy in avalanche mode,

non repetitive (inductive load switch off)

E_R

°C

I_(BR)R= 1 A, T_J= 25 °C

Operating junction and storage temperature range T_J, T_STG

- 55 to + 150

Revision: 21-Dec-11

Document Number: 88959

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

下载PDF

与BYG22ATR3相关器件

型号	品牌	描述	获取价格	数据表
BYG22A-TR3	VISHAY	Ultrafast Avalanche SMD Rectifier	获取价格
BYG22B	VISHAY	Super Fast Silicon Mesa SMD Rectifier	获取价格
BYG22B	SUNMATE	2A patch fast recovery diode 100V SMA series	获取价格
BYG22B	TAYCHIPST	Super Fast Silicon Mesa SMD Rectifier	获取价格
BYG22B	TEMIC	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AC,	获取价格
BYG22B	LGE	超快恢复二极管	获取价格