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BYG21MHE3_A/H PDF预览

BYG21MHE3_A/H

更新时间: 2024-01-06 20:45:09
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管局域网光电二极管
页数 文件大小 规格书
5页 89K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

BYG21MHE3_A/H 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:5.63
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260参考标准:AEC-Q101
最大重复峰值反向电压:1000 V最大反向电流:1 µA
最大反向恢复时间:0.12 µs表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BYG21MHE3_A/H 数据手册

 浏览型号BYG21MHE3_A/H的Datasheet PDF文件第2页浏览型号BYG21MHE3_A/H的Datasheet PDF文件第3页浏览型号BYG21MHE3_A/H的Datasheet PDF文件第4页浏览型号BYG21MHE3_A/H的Datasheet PDF文件第5页 
BYG21K-E3/HE3, BYG21M-E3/HE3  
www.vishay.com  
Vishay General Semiconductor  
Fast Avalanche SMD Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Low reverse current  
• Soft recovery characteristic  
• Fast reverse recovery time  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
IF(AV)  
1.5 A  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive, and telecommunication.  
VRRM  
800 V, 1000 V  
30 A  
IFSM  
IR  
1.0 μA  
MECHANICAL DATA  
VF  
trr  
1.6 V  
Case: SMA (DO-214AC)  
120 ns  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,...)  
ER  
20 mJ  
TJ max.  
Package  
Diode variation  
150 °C  
SMA (DO-214AC)  
Single  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
BYG21K  
BYG21K  
800  
BYG21M  
BYG21M  
1000  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
V
A
1.5  
30  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Pulse energy in avalanche mode, non repetitive  
ER  
20  
mJ  
°C  
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
Revision: 08-Mar-17  
Document Number: 88961  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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