BYG21M-HE3/TR

更新时间： 2024-01-11 12:49:54

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	92K
描述
DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN, Rectifier Diode

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技术参数
数据手册

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BYG21M-HE3/TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	ROHS COMPLIANT, PLASTIC, SMD, SMA, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

BYG21M-HE3/TR 数据手册

BYG21K-E3/HE3, BYG21M-E3/HE3

www.vishay.com

Vishay General Semiconductor

Fast Avalanche SMD Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated junction

• Low reverse current

• Soft recovery characteristic

• Fast reverse recovery time

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer, automotive, and telecommunication.

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

V_RRM

800 V, 1000 V

30 A

I_FSM

MECHANICAL DATA

I_R

1.0 μA

Case: DO-214AC (SMA)

V_F

t_rr

1.6 V

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

120 ns

E_R

20 mJ

T_Jmax.

Package

Diode variation

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

DO-214AC (SMA)

Single die

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BYG21K

800

BYG21M

1000

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Average forward current

V_RRM

I_F(AV)

1.5

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Pulse energy in avalanche mode, non repetitive

E_R

°C

(inductive load switch off) I_(BR)R= 1 A, T_J= 25 °C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

Revision: 21-Aug-13

Document Number: 88961

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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