是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.91 |
Is Samacsys: | N | 最大集电极电流 (IC): | 21 A |
集电极-发射极最大电压: | 1000 V | 门极发射器阈值电压最大值: | 6.5 V |
门极-发射极最大电压: | 20 V | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 165 W | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUP304 | INFINEON |
获取价格 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanc | |
BUP305 | INFINEON |
获取价格 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail curre | |
BUP305D | INFINEON |
获取价格 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail curre | |
BUP306D | INFINEON |
获取价格 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail curre | |
BUP307 | INFINEON |
获取价格 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanc | |
BUP307D | INFINEON |
获取价格 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail curre | |
BUP309 | INFINEON |
获取价格 |
IGBT (High switching speed Low tail current Latch-up free Avalanche rated) | |
BUP31 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-220AB | |
BUP311D | INFINEON |
获取价格 |
IGBT With Antiparallel Diode Preliminary data sheet | |
BUP313 | INFINEON |
获取价格 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanc |