Datasheet > BUP313DQ67040-A4228-A2

BUP313DQ67040-A4228-A2

更新时间： 2024-11-13 23:37:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管双极性晶体管
页数	文件大小	规格书
8页	114K
描述
TRANSISTOR DUOPACK IGBT

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中文翻译

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数据手册

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BUP313DQ67040-A4228-A2 数据手册

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BUP 313D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

BUP 313D

1200V 32A

TO-218 AB

Q67040-A4228-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

= 20 kΩ

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 90 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

T = 90 °C

Diode forward current

T = 90 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

108

Power dissipation

tot

T = 25 °C

200

Chip or operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Semiconductor Group

Dec-02-1996

12 3 4 5 6 7 8

中文翻译

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