BUP305

更新时间： 2024-11-13 22:17:19

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管开关双极性晶体管
页数	文件大小	规格书
7页	387K
描述
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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中文翻译

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数据手册

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BUP305 数据手册

BUP 305 D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

Q67040-A4225-A2

BUP 305 D

1200V 12A

TO-218 AB

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 90 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

T = 90 °C

Diode forward current

T = 90 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

100

Chip or operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Semiconductor Group

Dec-02-1996

12 3 4 5 6 7

中文翻译

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