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BUP307D PDF预览

BUP307D

更新时间: 2024-09-25 22:17:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管开关晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
7页 346K
描述
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

BUP307D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-218AB, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.9其他特性:HIGH SPEED
最大集电极电流 (IC):35 A集电极-发射极最大电压:1200 V
配置:SINGLE最大降落时间(tf):28 ns
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-218ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified最大上升时间(tr):35 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):250 ns标称接通时间 (ton):52 ns
Base Number Matches:1

BUP307D 数据手册

 浏览型号BUP307D的Datasheet PDF文件第2页浏览型号BUP307D的Datasheet PDF文件第3页浏览型号BUP307D的Datasheet PDF文件第4页浏览型号BUP307D的Datasheet PDF文件第5页浏览型号BUP307D的Datasheet PDF文件第6页浏览型号BUP307D的Datasheet PDF文件第7页 
BUP 307D  
IGBT With Antiparallel Diode  
Preliminary data  
• Low forward voltage drop  
• High switching speed  
• Low tail current  
• Latch-up free  
• Including fast free-wheel diode  
Pin 1  
Pin 2  
Pin 3  
G
C
E
Type  
V
I
Package  
Ordering Code  
CE  
C
BUP 307D  
1200V 35A  
TO-218 AB  
Q67040-A4221-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
V
1200  
V
CE  
CGR  
R
= 20 kΩ  
1200  
± 20  
GE  
Gate-emitter voltage  
DC collector current  
V
GE  
I
A
C
T = 25 °C  
35  
23  
C
T = 90 °C  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 25 °C  
70  
46  
C
T = 90 °C  
C
Diode forward current  
I
I
F
T = 90 °C  
18  
C
Pulsed diode current, t = 1 ms  
p
Fpuls  
T = 25 °C  
108  
300  
C
Power dissipation  
P
W
tot  
T = 25 °C  
C
Chip or operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Semiconductor Group  
1
Dec-02-1996  

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