Datasheet > 晶体管 > IGBT> BUP305D

BUP305D

更新时间： 2024-11-13 22:17:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管开关晶体管双极性晶体管栅
页数	文件大小	规格书
7页	387K
描述
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)

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中文翻译

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技术参数
数据手册

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BUP305D 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.89
Is Samacsys：	N	集电极-发射极最大电压：	1200 V
最大降落时间（tf）：	25 ns	门极发射器阈值电压最大值：	6.5 V
门极-发射极最大电压：	20 V	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	100 W
最大上升时间（tr）：	30 ns	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	Base Number Matches：	1

BUP305D 数据手册

BUP 305 D

IGBT With Antiparallel Diode

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Including fast free-wheel diode

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

Q67040-A4225-A2

BUP 305 D

1200V 12A

TO-218 AB

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 90 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

T = 90 °C

Diode forward current

T = 90 °C

Pulsed diode current, t = 1 ms

Fpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

100

Chip or operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Semiconductor Group

Dec-02-1996

12 3 4 5 6 7

中文翻译

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