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BUK9511-55A,127 PDF预览

BUK9511-55A,127

更新时间: 2024-10-01 21:19:43
品牌 Logo 应用领域
恩智浦 - NXP 局域网开关脉冲晶体管
页数 文件大小 规格书
13页 194K
描述
N-channel TrenchMOS logic level FET TO-220 3-Pin

BUK9511-55A,127 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-220包装说明:PLASTIC, SC-46, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.18雪崩能效等级(Eas):330 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):166 W
最大脉冲漏极电流 (IDM):266 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK9511-55A,127 数据手册

 浏览型号BUK9511-55A,127的Datasheet PDF文件第2页浏览型号BUK9511-55A,127的Datasheet PDF文件第3页浏览型号BUK9511-55A,127的Datasheet PDF文件第4页浏览型号BUK9511-55A,127的Datasheet PDF文件第5页浏览型号BUK9511-55A,127的Datasheet PDF文件第6页浏览型号BUK9511-55A,127的Datasheet PDF文件第7页 
BUK9511-55A  
-220AB  
O
T
N-channel TrenchMOS logic level FET  
Rev. 2 — 7 February 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features and benefits  
„ AEC Q101 compliant  
„ Suitable for logic level gate drive  
sources  
„ Low conduction losses due to low  
on-state resistance  
„ Suitable for thermally demanding  
environments due to 175 °C rating  
1.3 Applications  
„ 12 V and 24 V loads  
„ Motors, lamps and solenoids  
„ Automotive and general purpose  
power switching  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source  
voltage  
Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
55  
V
ID  
drain current  
VGS = 5 V; Tmb = 25 °C;  
75  
A
see Figure 1; see Figure 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
166  
W
 
 
 
 
 

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