BUK7K17-80E
Dual N-channel 80 V, 17 mΩ standard level MOSFET
10 May 2018
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for
use in high performance automotive applications.
2. Features and benefits
•
Dual MOSFET
•
•
•
•
AEC-Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
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12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Limiting values FET1 and FET2
VDS
ID
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
-
-
-
-
-
-
80
21
64
V
VGS = 10 V; Tmb = 25 °C; Fig. 2
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
W
Static characteristics FET1 and FET2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
-
-
-
12.5
10.4
37.1
16.7
mΩ
nC
nC
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 10 A; VDS = 64 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
-
-
Source-drain diode FET1 and FET2
Qr recovered charge
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C